The latest study aimed to evaluate the genotypes’ genetic potential and estimate the genetic parameters for yield-related traits in two faba beans (Vicia faba L.) cultivars with the influence of nano-silicon different concentrations. The experiment comprised a randomized complete block design (RCBD) with a factorial arrangement of two factors and three replications. Faba bean cultivars (Turkish and Italian) were content in the main plots, while the subplots comprised nano silicon different levels (0, 1, and 2 ml L-1). The analysis of variance exhibited significant differences between the cultivars for all studied traits. The superiority of the Turkish cultivar was remarkable for the pods per plant, seeds per pod, seed yield, and biological yield. The results showed that the phenotypic and genotypic variations were high for all traits at the nano silicon level of 2 ml L-1). However, they decreased at the control treatment. Heritability (broad sense) was extremely high for all traits and nano-silicon concentrations, indicating that the variation among the cultivars was mainly genotypic. The genetic gain displayed the highest for the 100-seed weight while low for the rest of the yield-related traits in faba beans.
Faba bean (Vicia faba L.), cultivars, nano-silicon concentrations, genotypic and phenotypic variations, heritability, genetic gain
The study showed the superiority of the Turkish cultivar in yield characteristics and its components and was more responsive to foliar application of the nano-silicon. It indicates that the phenotypic variation between the cultivars was predominantly genetic.