Mung bean (Vigna radiata L.) is a susceptible legume species to pod shattering, posing a high risk of yield loss. This study aimed to evaluate the agronomic traits and pod-shattering resistance of IPB mung bean lines. The research, conducted at the IPB University, Bogor, Indonesia, involved the evaluation of 17 IPB mung bean lines and three comparison varieties. Observed traits included growth and yield components, as well as pod-shattering resistance under three conditions: the field, sun-drying (14 days), and oven drying (at 40 °C for seven days). Genetic variability among the lines was found for plant height, days to flowering, seed weight per pod, and pod length. All IPB mung bean lines were grouping into three main clusters based on cluster analysis. Growth traits and yield components were influenced by genetic factors to varying degrees, as reflected in their low, medium, and high heritability estimates. Most yield components exhibited low heritability, except for the seed weight per pod, which showed medium heritability. Lines F9-Lom2/129-34, F9-VR480B/V1-156, and F9-VR10/V1-49 demonstrated superior yield components and high productivity (2.19–2.37 t/ha). These three lines were classified as a resistant to highly resistant classification for pod shattering. The sun-drying method was most effective in revealing the variation in pod-shattering resistance among the tested lines. These findings confirm that genetic variation influences both yield potential and pod shattering resistance in mung bean lines, providing valuable insights for future breeding programs.
Mung bean (V. radiata L.), determinate, pod-shattering resistance, selection, variance components, heritability, yield potential
The research elucidates the yield potential and pod-shattering resistance of IPB mung bean (V. radiata L.) lines. Pod shattering on mung bean causes significant yield losses before and during harvest in tropical areas. It is valuable to have a simple method for observing pod shatter resistance without relying on laboratory tests.